Mechanistic Understanding of the Planarization Behavior of Low κ Organosilicate Glass Films with Beol Barrier Slurries

Abstract

Low κ Organosilicate Glass (OSG) films are being proliferated into new IC device architectures with CMP requirements spanning a wide range (highly selective to non-selective, low polish rates to high polish rates). This study aims to understand the relationship between these OSG film properties (both bulk and surface) and their planarization response, especially removal rate (RR). Eight OSG films were polished along with TEOS oxide using two barrier slurries. The films ranged in carbon content from 8 to 24 % and in nanoindentation elastic modulus from 5.5 to 21.8 GPa. Counterintuitively, higher mechanical strength (i.e., hardness, elastic modulus) of the low κ film did not result in lower polish rates; but was in agreement with previously noted behavior [1]. Removal rates also did not correlate to key OSG film properties such as refractive index (RI), dielectric constant (κ), or total carbon content (by X-ray photoelectron spectroscopy). However, an inverse relationship was observed between RR and the bulk chemical bonding structure (Si-CH3/Si-O ratio) as determined by transmission infrared spectroscopy (FT-IR) measurements (see Figure 1). In addition, a correlation between RR and OSG film’s surface free energy post-polish (measured from water and diiodomethane contact angles) was also observed. Based on the above findings, a mechanistic understanding of low κ OSG polishing was developed. [1] L. Matz, M. Haas, M. O’Neill, R. Sawayda, A. Meyers, in Advanced Metallization Conference (AMC) (eds A. J. McKerrow, Y. Shacham-Diamand, S. Shingubara and Y. Shimogaki), Materials Research Society, Warrandale, PA, 463 (2009) Figure 1