Abstract
A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20–140 nm), growth time (0–30 min), growth temperature (520–580 °C), V/III ratio (40–160), nanotube spacing (300–2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.
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