Abstract
Temperature (11–250 K) and excitation power (5–480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe/Hg0.05Cd0.95Te superlattice (SL) sample in a spectral range of 5–18 μm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively.
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