Mechanisms of damage formation in semiconductors

Abstract

The damage accumulation in ion-implanted semiconductors is analysed using Rutherford backscattering spectrometry (RBS). When energetic ions are implanted in a material, they transfer their energy mainly into atomic collision processes (nuclear energy loss) and in electronic excitations (electronic energy loss). For a given material this primary energy deposition is determined by the mass and energy of the implanted ions and the ion fluence (number of ions per unit area). However, the damage concentration which is measured after implantation does not only depend on the primary energy deposition, but is strongly influenced by secondary effects like defect annealing and defect transformation. For the latter processes the target temperature and the ion flux (number of ions per unit area and time) play an important role. In this presentation the influence of the various parameters mentioned above on the damage accumulation is demonstrated for various materials. Simple empirical models are applied to get information about the processes occurring and to systematize the results for the various semiconductors.