Radiation damage study of MeV ions-implanted Nd:YVO4 crystal

Abstract

• Damage formation mechanism in MeV ion-implanted Nd:YVO 4 is studied. • 3 MeV Si + implantation results in substantial surface damage in Nd:YVO 4 . • Electronic energy loss plays a key role in surface damage formation. • The contributions of nuclear and electronic energy loss to damage are analyzed. • Threshold of electronic stopping power for damage formation is about 1.7 keV/nm. Damage formation mechanism of Nd:YVO 4 implanted with MeV ions is investigated. MeV Si + ions were implanted into Nd:YVO 4 crystal, and the lattice damage was measured using Rutherford backscattering spectroscopy/channeling (RBS/C) method. The damage creation kinetic indicates a significant contribution from electronic energy loss to the surface damage. A detailed analysis allows us to deduce the different contributions from electronic and nuclear stopping powers to the lattice damage production. An obvious difference in extent of damage from 1 MeV and 3 MeV Si + implantations also implies that there exists a threshold value of the electronic energy deposition for damage formation. The exact value of threshold is obtained by comparison with the experimental data obtained from 3 MeV O + , F + and Si + implantation results, which turns out to be (1.7 ± 0.1) keV/nm.