Abstract
Photosensitive Schottky barriers have been obtained for the first time by electrolytic deposition of zinc onto p-type CuInSe2 crystals. The capacitance-voltage and current-voltage characteristics of these structures have been studied at liquid nitrogen temperature and in the interval from 238 to 330 K. For a direct bias voltage, the current transfer in the system studied is characterized by the Ohm law, with space-charge-limited current and thermionic emission. Reverse-biased structures also obey the Ohm law and simultaneously exhibit soft breakdown. The relative quantum efficiency spectrum of photocurrent in the Zn/CuInSe2 barriers has been measured.
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