Year-end Sale % OFF 
Abstract
The mechanisms for the usually very strong background signal in optically detected magnetic resonance (ODMR) experiments have been studied in high-purity epitaxial GaAs layers. The optically excited carriers are heated by the microwave field, via both cyclotron resonance and other microwave absorption processes involving free-carrier transitions within a Landau subband. The main mechanism for the change of photoluminescence (PL) by the hot carriers in the temperature range 4-10 K studied in this work is concluded to be impact ionization of shallow bound excitons (BE's) and shallow donors by hot free carriers, resulting in a quenching of the shallow PL emissions related to BE's and donor-acceptor pairs. These processes explain the microwave-induced change of PL intensity (the ODMR background signal).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
