Abstract
To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF 3/ H 2 mixture is used for effective etching of SiO 2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO 2, diblock copolymer and Pt . Etch properties of SiO 2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO 2 layer to Pt layer was discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
