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Abstract
The influence of microwave radiation (2.45GHz) treatment on processes of reorganization and generation of defects in epitaxial films of GaN and GaAs has been studied. Physical reasons of the observed transformations caused by specific non-thermal action of microwave radiation have been analyzed. Long-term processes of structural transformation after microwave radiation treatment have been modeled. Our approximation is based on the assumption that evolution processes in the defect subsystem, in the crystal are random events, and distribution of the random value – the time before a random event – is a subject to the Weibull-Gnedenko law. Qualitative and quantitative agreements between experimental data and theoretical models of long-term structural changes caused by microwave treatment have been obtained. These results enable to explain non-monotonous behavior of photoluminescence spectra after microwave treatment and could be applied to prediction the consequences of non-thermal action of microwave radiation.
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