Abstract
Effect of microwave radiation (24GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5eV was studied using the low-temperature (T=2K) photoluminescence (PL) technique. The shapes of donor–acceptor pairs (DAP) and Y PL bands were studied in detail. The Huang–Rhys factor was calculated for the DAP luminescence depending on microwave radiation treatment. The increase of the distance between the DAP components responsible for emission at 1.455eV and the quenching of Y-band due to microwave irradiation were observed. The method to decrease the amount of extended defects in near-surface layers of CdTe:Cl single crystals has been proposed.
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