Abstract
Differential thermal analysis (DTA) and X-ray photoelectron spectroscopy (XPS) were used to study the oxidation of dispersed silicon oxide modified with chromium oxide structures by means of molecular layering, under linear heating in air to 1450°C. The mechanism of surface transformations of silicon carbide during its thermal oxidation was considered. It was shown that the oxidation resistance of the samples increased with increasing concentration of chromium in the surface film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.