Abstract

The formation of a crystal phase in the glass matrix of low‐firing glass/ceramic composite substrates limits the efficiency of the ceramic substrate when it is used in circuit boards. In the present study, adding approximately 30 vol % or more of alumina to a borosilicate‐glass/ceramic composite system as a ceramic filler caused the diffusion of aluminum ions from the alumina filler into the glass matrix and prevented the formation of a cristobalite crystal phase. The diffusion distance between the aluminum ions was ∼30 μm when the system was fired at 900°C for 10 min. Raman spectroscopic analysis proved that some of the aluminum ions had diffused into the glass matrix during firing, working as a network former in the glass matrix. Raman spectra near 460 and 1100 cm−1 indicate the change of network structure in the borosilicate glass. These phenomena indicate that crystallization of the borosilicate glass was prevented in the alumina‐filled borosilicate system.

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