Abstract
The impact of UV light (λ = 365 nm) on defect chemistry and composition of undoped SrTiO3 single crystals was investigated by means of impedance spectroscopy. In-plane conductivity measurements between 280 and 450 °C in air reveal a drastic increase of the bulk conductivity upon UV illumination. The measured time dependence of this increase is in accordance with oxygen chemical diffusion in SrTiO3. The corresponding photo-induced change in defect concentrations is caused by oxygen being pumped from the gas phase into the oxide under UV irradiation. This affects the entire SrTiO3 crystal rather than only the thin UV absorption zone and leads to very high oxygen chemical potentials with nominal oxygen pressures up to 106 bar. After switching the UV light off, the resulting conductivity increase relaxes extremely slowly due to slow surface exchange kinetics. A mechanistic model is introduced to explain the impact of UV light on the oxygen chemical potential as well as on the oxygen vacancy and hole/electron concentrations in semiconducting oxides, here SrTiO3. This model is based on the formation of oxygen quasi-chemical potentials in the illuminated region. It is discussed how the interplay of four kinetic parameters causes the observed time-dependent stoichiometry and thus conductivity changes.
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