Abstract
The paper is concerned on the properties of the new ideal circuit element, a memristor. We proposed memristor with nanothin three layers of Pt/ TiO2-x/TiO2/TiO2+x/Pt sandwiched structure in this paper,based on study of the working principles of HP memristor. As the new TiO2+x layer and its expansion effect,the switching speed of the new structure memristor mentioned would be faster. The paper gives the test result and mechanism of the new structure memristor, such as characteristic analysis results of Pt nanowire, memristor, repetitiveness and V-I characteristic hysteretic curve of three layers memristor by using semiconductor tester.
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