Abstract

The dephasing and lifetime of excitons in InSe layered crystals are carefully measured using three-pulse, four-wave mixing and two-dimensional Fourier transform (2DFT) spectroscopy. We obtain a detailed picture of the mechanism of excitonic dephasing in this layered material. The 2DFT spectra reveal contributions from the coherent excitation of continuum states, whereas the temperature dependence provides a detailed description of the phonon-exciton interactions and the low temperature limit of the homogeneous linewidth. The excitation density dependence reveals excitation-induced dephasing due to exciton-exciton scattering. The temperature-dependent homogeneous linewidth is dominated by the interaction of excitons with the $\ensuremath{\sim}$113 cm${}^{\ensuremath{-}1}$ out-of-plane phonon mode.

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