Abstract
The thin films of BFO, binary-doped Bi0.96Sr0.04Fe0.98Co0.02O3, and multi-doped Bi0.96Sr0.04Fe0.94Mn0.04Co0.02O3 are fabricated using the sol–gel method. To study the mechanism for the enhanced intrinsic ferroelectricity in multi-doped BFO, this work uses related aspects including the electrostatic potential energy, the Fermi level, and the Schottky interface barrier. Using multi-doped BFO can reduce the height of the electrostatic barrier and change the Fermi level so that the Schottky barrier height is increased to reduce the leakage current, thereby improving the intrinsic ferroelectricity. Also, using multivalent Mn with a double-exchange effect improves the ferromagnetism. These improved intrinsic ferroelectric and ferromagnetic properties make BFO applicable in various practical devices and fields.
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