Abstract
Bi3.15Nd0.85Ti3O12/BiFeO3 heterojunction thin films were fabricated through sol–gel method on Pt/Ti/SiO2/Si substrates. The phase structure, surface morphology, leakage current density, and ferroelectric properties of the Bi3.15Nd0.85Ti3O12/BiFeO3 thin films were investigated. The crystal structure for all BiFeO3 thin films was single perovskite phase, and Bi3.15Nd0.85Ti3O12 as a buffer layer can improve crystallinity, reduce the leakage current density of BiFeO3 thin films, and enhance their ferroelectric properties dramatically. The leakage current density of the Bi3.15Nd0.85Ti3O12/BiFeO3 thin films was two orders of magnitude less than that of single BiFeO3 thin films in the range of 10−9–10−7 A/cm2 at room temperature. The maximum remnant polarization 2P r of the Bi3.15Nd0.85Ti3O12/BiFeO3 thin films was 34 μC/cm2, which was much higher than that of either Bi3.15Nd0.85Ti3O12 thin films or BiFeO3 thin films.
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