Abstract
This letter presents a method to fabricate single-crystal silicon wires from (100) wafer and print them onto thin plastic substrates for high-performance, mechanically flexible, thin-film transistors by dry transfer printing. Electrical measurements indicate excellent performance, with a per ribbon mobility of 580 cm2/V s, subthreshold voltage of 100 mV/dec and on/off ratios >107. The inverter shows good performance and voltage gains of ∼2.5 at 3 V supply voltage. In addition, these devices revealed stable performance at bending configuration, an important feature essential for flexible electronic systems.
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