Abstract

This talk describes the fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon. These elements are fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon, and then lifting off the silicon. A large collection of such objects - which can have geometries that range from ribbons to platelets, sheets, disks and other shapes - constitutes a type of material, which we refer to as microstructured silicon (ps-Si), that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.

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