Mechanical Reliability Testing of Air-Gap Through-Silicon Vias

Abstract

The use of air gaps instead of SiO2 as insulators for through-silicon vias (TSVs) has been demonstrated to reduce the thermal stresses and the TSV capacitance of a 3-D integrated system. However, since the Cu plug in air-gap TSVs lacks support and fixation at the sidewalls, the mechanical strength is a serious concern. This paper for the first time reports the mechanical and humidity reliabilities of air-gap TSVs. Reliability tests including free drop test, vibration test, and accelerated moisture test are performed, and the failure mechanisms are analyzed. The residual stresses in silicon substrates are also measured using micro-Raman Spectroscopy. Experimental results show that the premetal dielectric that acts as the only support for Cu plugs is the weak point causing mechanical reliability issues, and oxidation of Cu plugs at high moisture and high temperature is the main reason for humidity reliability problems. Multilayer bonding of TSV chips to constitute a 3-D system remarkably increases the mechanical and humidity reliabilities of air-gap TSVs because of the support and protection provided by the bonding chips.