Abstract

Ti 1− x Si x N coatings were synthesized by cathodic arc evaporation with plasma-enhancing filter duct, using Ti 80Si 20 alloy target as cathodes. Optical emission study revealed that excitation, ionization and charge transfer reactions of the Ti-Si-N plasma occurred during the Ti 1− x Si x N deposition process. The chemical content of Si varied from 3.3 to 6.0 at% in Ti 1− x Si x N depending on the nitrogen partial pressure of the reaction chamber. All the Ti 1− x Si x N coatings displayed a NaCl structure and a preferred (2 0 0) orientation parallel to the substrate surface. Among the studied Ti 1− x Si x N coatings, the Ti 1− x Si x N with 6 at.% Si possessed the highest hardness of 45 GPa and H 3/ E* 2 ratio of 0.527 GPa, indicating the best resistance to plastic deformation. We found that the structure and mechanical properties of the Ti 1− x Si x N films were correlated with the nitrogen pressure and silicon content of the coatings.

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