Abstract
Abstract Many potential applications of deposited BN and SiN, such as for wear-resistant coatings or optical layers, are limited by the intrinsic stress in thin films which can be high enough to cause severe problems. In ion beam assisted deposition (IBAD) boron nitride and reactive ion beam sputtering deposition (RIBSD) boron and silicon nitride layers, the internal stress can always be reduced below −1 GPa by a post-deposition annealing. When the deposition temperature is varied up to 600 °C, the stress in RIBSD Si 3N4 layers is not significantly reduced and, for IBAD BN films, it is even greater than expected from the development of the thermal stress. These results suggest that at 500 eV the spatial extent of the ion peening effect may largely exceed the penetration depth of ions and of recoil atoms in the solid. The observed difference in behavior between RIBSD films and IBAD ones is probably due to the higher incident energy during IBAD deposition.
Published Version
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