Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

Abstract

The photo leakage current ( I PLC) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I PLC of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level ( E F). Experimental results show the I PLC of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy ( E a) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E F.