Abstract
Mechanical and electrical properties of the ternary Bi-Ge-Sn alloys were investigated in this study. Calculation of isothermal section at 200, 300, and 25 ºC was carried out by using optimized thermodynamic parameters for the constitutive binary systems. Microstructures of alloys were observed by using optical microscopy and scanning electron microscopy (SEM). Phases in microstructures have been detected by X-ray diffraction (XRD) analysis and compositions of the phase by energy dispersive spectrometry (EDS). EDS results were compared with the predicted isothermal section at 200 and 300 ºC, and good agreement has been reached between them. The Brinell hardness and electrical conductivity of selected alloys were measured. Through ANOVA analysis and application of the obtained results, an appropriate mathematical model is proposed for every composition of alloys. By using the appropriated mathematical model for Brinell hardness and electrical conductivity, isolines for those properties were presented.
Highlights
As the properties of the material can be changed with the addition of other elements, the testing of alloys with different compositions is always current, in a way to obtain alloys with new properties
Constitutive binary systems of the ternary Bi-Ge-Sn system were extensively studied in the past
Three isothermal sections at 200, 300, and 25 °C are experimentally investigated for the ternary Bi-Ge-Sn system
Summary
As the properties of the material can be changed with the addition of other elements, the testing of alloys with different compositions is always current, in a way to obtain alloys with new properties. Experimental examination and thermodynamic description of the ternary Bi-Ge-Sn system have been investigated by Đorđevićet al. The electrical and mechanical properties of the ternary Bi-Ge-Sn system have not been investigated before. Germanium-based alloys are mainly used as memory materials [5,6,7,8]and for the production of DVDs, optical, flash andBlueRay disks, etc. By the addition of Bi to Ge-based materials, their semiconducting properties can be changed considerably, which may be utilized for the development of completely new types of semiconducting materials [10]. Experimental investigation of electrical and mechanical properties of the ternary Bi-Ge-Sn alloys at room temperature (≈25 °C), as well as isothermal sections on 200 and 300 °C, is shown in this study. The results obtained in this paper were intended to provide a better insight into the properties of the test alloys
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