Mechanical analysis of the interface bonding state of a TiO2 film/Si substrate

Abstract

TiO2 film is prepared on the surface of a natural oxide layer of a monocrystalline silicon substrate via RF magnetron sputtering. HRTEM (High Resolution Transmission Electron Microscope) imaging and EDX spectroscopy are performed on the sample interface, demonstrating that the film sample has a two-layer structure. Combined with XRD, the analysis shows that the upper film is a crystalline TiO2 film with a thickness of approximately 30 nm and that the lower film is a natural amorphous SiO2 oxide film with a thickness of approximately 22 nm. A geometric phase analysis (GPA) and Hooke's law are used to analyse the stress and bonding state at the interfaces between the monocrystalline silicon substrate and the natural oxide layer, between rutile TiO2 and the natural oxide layer, and between anatase TiO2 and the natural oxide layer. It is concluded that the interface bonding state of the monocrystalline silicon/natural oxide layer is good and that the interface bonding state at the interface between rutile and the natural oxide layer is better than that between anatase and the natural oxide layer.