Abstract
This paper presents an experimental method for determining additive phase noise of an unmatched transistor in a stable 50-Omega environment. The measured single-sideband phase noise is used to determine the large-signal noise figure of the device. From the Leeson-Cutler formula and a known oscillator circuit with the characterized transistor, the phase noise of the oscillator can be predicted. The method is applied to characterization of several bipolar devices around 3.4 GHz, the frequency of interest for miniature rubidium-based atomic clock voltage-controlled oscillators.
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