Abstract
Two experimental implementations of the double-cantilever beam experiment, developed to measure the bonding energy in wafer-bonded semiconductors, are compared for the first time. The comparison is carried out in two material combinations relevant to microelectronics and silicon photonics: Si on an insulator and InP on Si. Although the two implementations differ in the scale of the measured sample area, the measurement conditions, and the step in the fabrication process at which they are applied, they are shown to yield the same values for bonding energy within experimental errors. Both techniques also show the same trend in the evolution of bonding energy when the samples are subjected to annealing.
Highlights
Semiconductor-wafer direct bonding is a well-established and mature technology for tightly integrating heterogeneous materials, without high defect densities typically associated with heteroepitaxy.1 As such, it has found many applications in the semiconductor industry
The authors presented a nano-scale alternative to the experiment that combined instrumented nanoindentation and atomic force microscopy (AFM) to locally debond a membrane of a semiconductor transferred to Si using wafer bonding
III and material parameters from Ref. 15, the surface bonding energy GGG was measured from the set of indentations on the InP on insulator (InPOI) samples
Summary
Semiconductor-wafer direct bonding is a well-established and mature technology for tightly integrating heterogeneous materials, without high defect densities typically associated with heteroepitaxy. As such, it has found many applications in the semiconductor industry. The torque imposed by this separation is balanced by debonding the two wafers over a certain length along the bonded interface.4–6 The authors presented a nano-scale alternative to the experiment that combined instrumented nanoindentation and atomic force microscopy (AFM) to locally debond a membrane of a semiconductor transferred to Si using wafer bonding.. The authors presented a nano-scale alternative to the experiment that combined instrumented nanoindentation and atomic force microscopy (AFM) to locally debond a membrane of a semiconductor transferred to Si using wafer bonding.8–10 The sample fabrication and experimental protocol for each measurement are described Results from both techniques are presented and compared for the two types of bonded materials
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
