Measuring Methods of Solar Cell Parameters Using Spectrum Response of Short-Circuit Current

Abstract

Using the spectrum response in which a photon flux F is required to produce the short-circuit current to be constant, new methods for the determination of the solar cell parameters, i.e. the ratio (Dp/Sp) of the diffusion coefficient Dp of minority carriers in the n-type top region to the surface recombination velocity Sp at the front surface, the junction depth xj, the reflectivity R and the diffusion length Ln of minority carriers in the p-type base region, are proposed. It is obtained that Ln has a tendency to decrease with increasing the doping level and that R of black cells has a tendency to decrease with etching time. It is found experimentally that Dp/Sp of flat-surface cells and of black cells has a tendency to increase with doping level and with etching time, respectively.