Abstract
Precise measurements of the double-sided thermal resistance of press-pack insulated gate bipolar transistors (PP IGBTs) are challenging because of their special packaging and operating conditions. This article presents a method for calculating the double-sided heat dissipation ratio of PP IGBT modules. An indirect measurement technique for the power consumption on both sides of the module is also proposed, in which the water temperature is measured at the inlet and outlet of the water-cooled radiators corresponding to the collector and the emitter in the working state of the module. A PP IGBT device test fixture is constructed that can apply a measurable and adjustable pressure to the device and provide electrical connections. According to the proposed test theory, a matching double-sided thermal resistance test platform is developed to test a PP IGBT module made by the State Grid Smart Grid Research Institute. The influence of pressure on the thermal conduction characteristics of the PP IGBT module is then analyzed.
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