Measurements of radiation effects in an antifuse FPGA

Abstract

This paper presents the irradiation and the measurement analysis for a commercial antifuse Field Programmable Gate Array (FPGA) from Microsemi’s Axcelerator family, part number AX250. Following proton and X-ray beam irradiation, at very high dose rate above 1krad/s, the total ionizing dose (TID) first effects were visible around 260 krad (SiO 2), and this threshold value increases at lower radiation dose rates. We expect for most space and accelerator applications that this value will be at least several Mrads, or even that the FPGA might never reach this threshold. At very high radiation dose rates, TID-induced leakage currents were observed in the device. FPGA data were recorded continuously for more than 100 h after each irradiation with a fully operating FPGA. Quantitatively, the room-temperature annealing of the radiation-induced defects leads to a fast decrease of the device leakage current by a factor of 7 in the first 100 h after irradiation. The last measurements done after three months place the currents to within 30% to 70 % relative to the before-irradiation values in case of two tested FPGA. Several firmware configurations were used to test different logic resources and to measure single event upsets (SEUs). An upper limit of SEU logic cross-section was found to be (2.56 ± 0.51) ⋅ 10−13 cm 2/FPGA for dose rates around 1krad/s. SEU cross-section values for RAM blocks have on average a value of (3.72 ± 0.8) ⋅ 10−14 cm 2/bit. The complete list of results is given and the effects are extrapolated to a high-energy physics experiment environment — LHCb RICH at CERN.