Abstract
The Peltier coefficient of n-type GaAs was measured by passing an electrical current through the GaAs-Ga solid-liquid interface in a vertical liquid-phase epitaxy (LPE) system. Application of a steady-state heat-transfer analysis yielded values for the Peltier coefficient of 0.141 to 0.203 V in the 530–830 °C temperature range. From the study of measurements of Peltier cooling as a function of GaAs substrate thickness, current amplitude, and system geometry, it was concluded that effective utilization of Peltier cooling depends greatly on specimen thickness, doping, and furnace temperature, especially in LPE applications.
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