Abstract
The kinetics of growth and dissolution and compositional grading in the solid are computed when a liquid-phase epitaxial system is subjected to temperature programming. We solve the transport equations (including the effect of interface motion) by means of series expansions in powers of t1/2. This requires a careful analysis of the phase relations that hold at the crystal-fluid interface, because these are now explicitly time dependent. The theory is applied to a specific active layer of a (GaAl)As heterostructure laser, but the calculations can be extended to any III-V ternary system, and indeed to any multicomponent system.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
