Abstract
The doping densities in n-InAs structures were studied by means of capacitance- voltage technique using electrolyte to form Schottky-like contact. It was shown that in heavily doped InAs (> 1018 cm-3) the depletion approximation can be used to obtain the true doping concentration. Concentration in low doped InAs can be estimated by simulation (using modified Thomas-Fermi approximation). Measured doping densities were compared with concentration obtained by Hall measurements. The difference between CV and Hall results in undoped samples was explained.
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