Abstract
Magnetophonon resonance experiments of longitudinal magnetoresistance are carried out using the magnetic field modulation and second harmonic detection method to investigate band-edge phonons in n-InSb and n-GaAs and to determine the intervalley phonons in n-Ge and n-Si. The TA phonon energies were determined to be 4.8 meV at the X point and 5.1 meV at the (0.6, 0, 0) point in n-InSb and 9.8 meV at the X point in n-GaAs. The intervalley phonon energy was found to be 30.0 meV (X1) in n-Ge. Many intervalley phonons were observed in n-Si and that with the strongest interaction with electrons was found to be 47.8 meV which is an f-type intervalley phonon.
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