Magnetophonon resonance in semiconductors

Abstract

The study of the magnetophonon resonance effect in semiconductors carried out in Osaka University is reviewed, covering theories, experimental techniques and results obtained. Experimental techniques are briefly described, where emphasis is placed on the magnetic field modulation technique. The effective mass is determined in III–V semiconductors at a wide range of lattice temperatures and its temperature dependence is discussed. Magnetophonon resonance associated with impurity state, zone-edge phonons, and intervalley phonons are also reviewed. At high electric and high magnetic fields, the magnetophonon resonance extrema in the magnetoconductivity exhibit splitting, which is shown to be interpreted in terms of the inelastic inter-Landau level scattering. Magnetophonon resonance of two-dimensional electron gas in heterojunctions is discussed and the sheet electron density dependence of the magnetophonon resonance amplitudes is explained in terms of the Landau level broadening due to remote impurity scattering.