Abstract
ABSTRACT The validity of the voltage-current relation I1/2 = S( V − V0) is demonstrated for a wide range of planar p-n. junction diode structures up to current densities in excess of 103 A/cm2. The results are interpreted quantitatively in the light of theoretical treatment. It is concluded that the current flow in a strongly forward biased p-n junction is essentially space-charge limited and represents a complete analogon of the vacuum diode ease. It is shown that the same voltage-current relation is applicable to non-planar geometries and that there is an upper limit to its validity, as a result of recharging of donor and acceptor levels.
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