Abstract
The static Debye-Waiter factor of Czochralski-grown silicon crystals heat-treated at a high temperature has been measured by X-ray section topography. The static Debye-Waiter factor was determined through the variations in the Pendellösung fringes in a topograph. The measured static Debye-Waiter factor was proportional to the square of the scattering vector used, as expected from the theory. From an analysis of the experimental results the average size of the micro-defects formed by the heat treatment could be estimated.
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