Abstract
In this work, we report on photoreflectance (PR) and photoreflectance-difference (PR-D) measurements of GaAs(001) upon deposition of Gd2O3 thin films. The study is focused on two different substrates: a semi-insulating (SI) with Cr impurities and a Si-doped n-type. PR-D results show that Gd2O3 induces a tensile strain on the GaAs surface and a direct piezo-electric dipole is created. Such strain changes the crystal symmetry from cubic to orthorhombic and renders the quadratic electro-optic (QEO) component anisotropic. For the SI substrate, both linear electro-optic (LEO) and QEO components contribute to the PR-D spectrum, whereas the n-type PR-D spectrum is dominated by the LEO component. In both cases, a tensile strain induces a rigid redshift of ∼20 meV to low energies of the E1 and E1 + Δ1 optical transitions.
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