Measurement of the room-temperature hall mobility of injected electrons in liquid tetramethylsilane

Abstract

The electron Hall mobility in tetramethylsilane (TMS) has been measured at room temperature using the Redfield technique. The resulting mobility, 124 cm 2/V s is 25% higher than the time-of-flight mobility. From their comparison we conclude that it is likely that the electron-scattering mechanism is due to acoustic phonons whose interaction with electrons can be described in the deformation potential approximation.