Abstract
Stimulated emission, obtainable at high optical pumping levels, has been used to follow the pressure dependence of the Γ-band gap of molecular beam epitaxial In0.53Ga0.47As on (001)InP. Hydrostatic pressure was generated using a diamond anvil cell, and all measurements were made at room temperature. The gap varies sublinearly with pressure for P≳10 kbar, having an initial slope of 12.44 meV/kbar. The deviation from a linear behavior is largely due to nonlinearities in the equation of state at higher pressures. The deformation potential (Ξd+ (1)/(3) Ξu−a) =−(7.79±0.4)eV, for the Γ-band gap.
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