Abstract
The concentration profile of out-diffused oxygen in Czochralski silicon crystals has been measured in identical specimens by X-ray lattice parameter measurement, charged-particle activation analysis, and spreading-resistance measurement after thermal donor formation. The experimental profiles obtained by the X-ray method and charged-particle activation analysis were consistent, but the spreading-resistance method yielded less reliable results. The surface concentration of oxygen is discussed on the basis of Henry's law.
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