Abstract
A new method of investigation of the Auger ionization probability, based on the analysis of the static characteristics of a tunnel MIS emitter Auger transistor, is proposed. The main advantages of this method are monoenergetic electron injection and very simple energy control. The ionization probability (quantum yield) for silicon was first determined as a function of electron energy Ee in the near-threshold range. The Auger effect in Si is noticeable even for Ee approximately=1.2-1.5 eV. The data obtained in the present paper are in good agreement with some experimental and theoretical results published for Ee>2 eV.
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