Abstract
We propose and demonstrate a purely electrical method for measuring the effective temperature Te of majority carriers under the injection of hot minority carriers. The Te of holes in a thin p-type InGaAs layer, heated by electron injection from an InAlAs layer in a three-terminal lattice-matched heterostructure, was determined by measuring the thermionic emission current of holes over another specially designed InGaAs/InAlAs barrier. At T=77 K, we observed an overheating Te−T of over 50 K, even at moderate injection power levels.
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