Abstract
A modified sessile drop method, that is, a crucible method was developed to obtain a precise density value of molten silicon using a Si 3 N 4 crucible. The density decreases linearly with increasing temperature in the range from 1689 to 1853 K. However, anomalous behavior of the density with temperature reported by another investigator was not observed. The density and the thermal expansion coefficient of molten silicon at the melting point are 2.52 Mg/m 3 and 1.29 x 10 -4 K -1 , respectively. The density decreases with increasing boron concentration in silicon. The density remains almost constant in the range of the oxygen partial pressure of the argon atmosphere, PO 2 , from 10 -27 to 10 -17 MPa.
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