Abstract
The influence of boron addition on oxygen solubility in silicon melts has been investigated. It was found that the oxygen concentration increases from 2 × 10 18 to 4 × 10 18 atoms/ cm 3 with increasing boron concentration in silicon melts from nondoped to 5 × 10 20 atoms/ cm 3. Boron atoms by weak attraction in boron-doped silicon melts. The temperature dependence of oxygen concentration in boron-doped silicon melts is small and without definition in the experimental range investigated.
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