Abstract
We have developed the method of obtaining distribution of the stress in the crystal by using a multi channel Raman scattering apparatus. It is difficult to obtain the presence of the stress from the amount of the Raman shift because it is small though the Raman-spectrum shifts by the stress. We have shown that the Raman intensity ratio on both sides (± a few cm −1) of the center wave number of the Raman spectrum was sensitive in the peak wave number shift. We developed an apparatus which measured the intensity distribution on both sides of the peak at the same time, and obtained intensity ratio distribution. The stress distribution in the neighborhood of a dislocation wall in the ZnSe crystal was obtained as an example of applying this method.
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