Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm InGaAsP lasers with lightly doped active layers

Abstract

Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) and the leakage current due to electron drift. The Auger recombination coefficient is less than 0.1 × 10−28 cm6/s.