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https://doi.org/10.1049/el:20053374
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Cite Journal: Electronics Letters |  Publication Date: Nov 10, 2005 |
 Citations: 21 |
Affiliation: University of Michigan–Ann Arbor
Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 µm is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm−1.
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