Abstract
The minority-carrier generation lifetime has been measured in GaAs by observing the transient capacitance that occurs when an MOS is switched from accumulation to deep depletion. Application of this technique requires the fabrication of an MOS that shows inversion; this has been done by growing a native GaAs oxide with plasma oxidation. Preliminary results are reported on both lifetime and surface recombination velocity in p-type GaAs.
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