Abstract
Insulated-gate bipolar transistors (IGBTs) operated in short circuit become instable in certain driving and load conditions. The induced oscillations can compromise robustness and reliability of the entire power converter. The stability of the device inserted in a real system can be analyzed using the theory of linear oscillators that requires the knowledge of input or output impedance of the device in real operating conditions. In this paper, we present an experimental procedure for measuring in pulsed mode the small-signal impedance of a power device biased in any test conditions. The small-signal input impedance of a 650-V 20-A IGBT operated in short circuit has been measured as a function of the frequency. This input impedance has been used to extract the stability map of the IGBT in short circuit, which allows us to easily predict the test conditions where the IGBT becomes instable. The validity of this stability map has been confirmed by a large-signal time-domain characterization of the IGBT operated in short circuit. The proposed technique is very useful to design driving circuit able to avoid instable operations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
